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TC4627EOE - MOSFET DRVR 1.5A 1-OUT Hi/Lo Side Non-Inv 16-Pin SOIC W Tube

TC4627EOE

Active
Microchip Technology

MOSFET DRIVER, HIGH SIDE AND LOW SIDE, 4V-6V SUPPLY, 1.5A AND 10 OHM OUTPUT, SOIC-16

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TC4627EOE - MOSFET DRVR 1.5A 1-OUT Hi/Lo Side Non-Inv 16-Pin SOIC W Tube

TC4627EOE

Active
Microchip Technology

MOSFET DRIVER, HIGH SIDE AND LOW SIDE, 4V-6V SUPPLY, 1.5A AND 10 OHM OUTPUT, SOIC-16

Technical Specifications

Parameters and characteristics commom to parts in this series

SpecificationTC4627EOETC4627 Series
Channel Type-Single
Current - Peak Output (Source, Sink)-1.5 A
Driven Configuration-High-Side, Low-Side
Gate Type-N-Channel, P-Channel MOSFET, P-Channel
Input Type-Non-Inverting
Mounting Type-Surface Mount, Through Hole
null-
Number of Drivers-1
Operating Temperature-70 - 85 °C
Operating Temperature--40 - 0 °C
Operating Temperature-125 °C
Operating Temperature--55 °C
Package / Case-0.295 in
Package / Case-16-SOIC, 8-DIP, 8-CDIP
Package / Case-7.5 mm
Package / Case-0.3 in
Package / Case-7.62 mm
Rise / Fall Time (Typ)-27 ns
Rise / Fall Time (Typ)-33 ns
Supplier Device Package-16-SOIC, 8-PDIP, 8-CERDIP
Voltage - Supply-6 V
Voltage - Supply-4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 141$ 5.01
Microchip DirectTUBE 1$ 6.58
25$ 5.49
100$ 5.01
1000$ 4.16
5000$ 3.83
10000$ 3.57
NewarkEach 1$ 5.21

TC4627 Series

1.5 A MOSFET Gate Driver with Voltage Tripler

PartMounting TypeChannel TypeNumber of DriversRise / Fall Time (Typ) [custom]Rise / Fall Time (Typ) [custom]Gate TypeOperating Temperature [Max]Operating Temperature [Min]Supplier Device PackageInput TypeDriven ConfigurationCurrent - Peak Output (Source, Sink)Voltage - Supply [Max]Voltage - Supply [Min]Package / Case [x]Package / CasePackage / Case [y]Package / CasePackage / CaseOperating Temperature [Max]Operating Temperature [Min]
Microchip Technology
TC4627EOE
Surface Mount
Single
1
27 ns
33 ns
N-Channel, P-Channel, P-Channel MOSFET
85 °C
-40 °C
16-SOIC
Non-Inverting
High-Side, Low-Side
1.5 A, 1.5 A
6 V
4 V
0.295 in
16-SOIC
7.5 mm
Microchip Technology
TC4627EPA
Through Hole
Single
1
27 ns
33 ns
N-Channel, P-Channel MOSFET
85 °C
-40 °C
8-PDIP
Non-Inverting
High-Side, Low-Side
1.5 A, 1.5 A
6 V
4 V
8-DIP
0.3 in
7.62 mm
Microchip Technology
TC4627EOE713
Surface Mount
Single
1
27 ns
33 ns
N-Channel, P-Channel MOSFET
85 °C
-40 °C
16-SOIC
Non-Inverting
High-Side, Low-Side
1.5 A, 1.5 A
6 V
4 V
0.295 in
16-SOIC
7.5 mm
Microchip Technology
TC4627EPA
Microchip Technology
TC4627CPA
Through Hole
Single
1
27 ns
33 ns
N-Channel, P-Channel MOSFET
70 °C
0 °C
8-PDIP
Non-Inverting
High-Side, Low-Side
1.5 A, 1.5 A
6 V
4 V
8-DIP
0.3 in
7.62 mm
Microchip Technology
TC4627COE
Microchip Technology
TC4627MJA
Through Hole
Single
1
27 ns
33 ns
N-Channel, P-Channel MOSFET
8-CERDIP
Non-Inverting
High-Side, Low-Side
1.5 A, 1.5 A
6 V
4 V
8-CDIP
0.3 in
7.62 mm
125 °C
-55 °C
Microchip Technology
TC4627EOE
Microchip Technology
TC4627COE713
Microchip Technology
TC4627EOE713

Description

General part information

TC4627 Series

The TC4626/4627 are single CMOS high speed gate drivers with an on-board voltage boost circuit. These parts work with an input supply voltage from 4 to 6 V. The internal voltage booster will produce a VBOOST potential up to 12 V above VIN. This VBOOST is not regulated, so its voltage is dependent on the input VDD voltage and output drive loading requirements. An internal under voltage lockout (UVLO) circuit keeps the output in a low state when VBOOST drops below 7.8 V. Output is enabled when VBOOST is above 11.3 V.