C3D02065E-TR

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Wolfspeed

DIODE SIC 650V 8A TO252-2

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Wolfspeed

DIODE SIC 650V 8A TO252-2

Technical Specifications

Parameters and characteristics commom to parts in this series

Specification	C3D02065E-TR	C3D02065 Series

Capacitance @ Vr, F	120 pF	120 pF
Current - Average Rectified (Io)	8 A	8 A
Current - Reverse Leakage @ Vr	50 µA	50 µA
Mounting Type	Surface Mount	Surface Mount
Operating Temperature - Junction [Max]	175 ░C	175 ░C
Operating Temperature - Junction [Min]	-55 C	-55 C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3	SC-63, DPAK (2 Leads + Tab), TO-252-3
Reverse Recovery Time (trr)	-	0 ns
Speed	200 mA, 500 ns	200 - 500 mA
Speed	-	No Recovery Time
Supplier Device Package	TO-252-2	TO-252-2
Technology	SiC (Silicon Carbide) Schottky	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V	650 V
Voltage - Forward (Vf) (Max) @ If	1.8 V	1.8 V

DIODE SIL CARB 650V 8A TO252-2

Part	Speed	Capacitance @ Vr, F	Mounting Type	Package / Case	Current - Average Rectified (Io)	Technology	Supplier Device Package	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - Forward (Vf) (Max) @ If	Speed
Wolfspeed C3D02065E	No Recovery Time	120 pF	Surface Mount	DPAK (2 Leads + Tab), SC-63, TO-252-3	8 A	SiC (Silicon Carbide) Schottky	TO-252-2	0 ns	50 µA	650 V	175 ░C	-55 C	1.8 V
Wolfspeed C3D02065E-TR		120 pF	Surface Mount	DPAK (2 Leads + Tab), SC-63, TO-252-3	8 A	SiC (Silicon Carbide) Schottky	TO-252-2		50 µA	650 V	175 ░C	-55 C	1.8 V	200 mA, 500 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 650 V 8A Surface Mount TO-252-2

Technical documentation and resources