DIODE SIL CARB 650V 8A TO252-2
| Part | Speed | Capacitance @ Vr, F | Mounting Type | Package / Case | Current - Average Rectified (Io) | Technology | Supplier Device Package | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) [Max] | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Voltage - Forward (Vf) (Max) @ If | Speed |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Wolfspeed C3D02065E | No Recovery Time | 120 pF | Surface Mount | DPAK (2 Leads + Tab), SC-63, TO-252-3 | 8 A | SiC (Silicon Carbide) Schottky | TO-252-2 | 0 ns | 50 µA | 650 V | 175 ░C | -55 C | 1.8 V | |
Wolfspeed C3D02065E-TR | 120 pF | Surface Mount | DPAK (2 Leads + Tab), SC-63, TO-252-3 | 8 A | SiC (Silicon Carbide) Schottky | TO-252-2 | 50 µA | 650 V | 175 ░C | -55 C | 1.8 V | 200 mA, 500 ns |