IPS65R400CEAKMA1

Obsolete

Infineon Technologies

TRANS MOSFET N-CH 650V 15.1A 3-PIN(3+TAB) TO-251 TUBE

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Obsolete

Infineon Technologies

TRANS MOSFET N-CH 650V 15.1A 3-PIN(3+TAB) TO-251 TUBE

Technical Specifications

Parameters and characteristics for this part

Specification	IPS65R400CEAKMA1

Current - Continuous Drain (Id) @ 25°C	15.1 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	39 nC
Input Capacitance (Ciss) (Max) @ Vds	710 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	IPAK, TO-251-3 Short Leads, TO-251AA
Power Dissipation (Max)	118 W
Supplier Device Package	PG-TO251-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Vgs(th) (Max) @ Id	Technology	Supplier Device Package	Package / Case	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Mounting Type	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)
Infineon Technologies IPS65R400CEAKMA1	3.5 V	MOSFET (Metal Oxide)	PG-TO251-3	IPAK TO-251-3 Short Leads TO-251AA	15.1 A	39 nC	650 V	Through Hole	N-Channel	10 V	710 pF	118 W	-55 °C	150 °C	20 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Arrow	N/A	1	$ 0.45

General part information

N-Channel 650 V 15.1A (Tc) 118W (Tc) Through Hole PG-TO251-3

Technical documentation and resources