Zenode.ai Logo
Beta
K
BSC035N10NS5ATMA1 - INFINEON BSC190N12NS3GATMA1

BSC035N10NS5ATMA1

Active
Infineon Technologies

OPTIMOS™ 5 N-CHANNEL POWER MOSFET 100 V ; SUPERSO8 5X6 PACKAGE; 3.5 MOHM;

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheet
BSC035N10NS5ATMA1 - INFINEON BSC190N12NS3GATMA1

BSC035N10NS5ATMA1

Active
Infineon Technologies

OPTIMOS™ 5 N-CHANNEL POWER MOSFET 100 V ; SUPERSO8 5X6 PACKAGE; 3.5 MOHM;

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationBSC035N10NS5ATMA1
Current - Continuous Drain (Id) @ 25°C100 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)6 V, 10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]87 nC
Input Capacitance (Ciss) (Max) @ Vds6500 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerTDFN
Power Dissipation (Max)2.5 W, 156 W
Rds On (Max) @ Id, Vgs3.5 mOhm
Supplier Device PackagePG-TDSON-8-7
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3.8 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.66
10$ 1.50
100$ 1.34
Digi-Reel® 1$ 1.66
10$ 1.50
100$ 1.34
Tape & Reel (TR) 5000$ 1.09

Description

General part information

BSC035 Series

Infineon’s OptiMOS™ 5 industrial power MOSFET devices in 80 V and 100 V are designed for synchronous rectification in telecom and server power supply application, but also the ideal choice for other applications such as solar, low voltage drives and laptop adapter.

Documents

Technical documentation and resources