IXTA96P085T

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LITTELFUSE

DISCMSFT PCHAN-TRENCH GATE TO-263D2

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IXTA96P085T

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LITTELFUSE

DISCMSFT PCHAN-TRENCH GATE TO-263D2

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Description Specifications Series Pricing CAD Documents

Description

General part information

IXTA96 Series

Trench P-Channel MOSFETs are well suited for ‘high side’ switching applications where a simple drive circuit referenced to ground can be employed, avoiding additional ‘high side’ driver circuitry commonly involved when using an N-Channel MOSFET. This enables designers to reduce component count, thereby improving drive circuit simplicity and over-all component cost structure. Furthermore, it allows for the design of a complementary power output stage with a corresponding N-Channel MOSFET, for a power half bridge stage paired with a simple drive circuit. Advantages: Low gate charge resulting in simple drive requirement High power density Fast switching

Technical Specifications

Parameters and characteristics for this part

Specification	IXTA96P085T

Current - Continuous Drain (Id) (Tc)	96 A
Drain to Source Voltage (Vdss)	85 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Max)	180 nC
Input Capacitance (Ciss) (Max)	13100 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Package Name	TO-263AA
Power Dissipation (Max)	298 W
Rds On (Max)	13 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	15 V
Vgs(th) (Max)	4 V

IXTA96 Series

Part	Current - Continuous Drain (Id) (Tc)	FET Type	Technology	Package Name	Vgs(th) (Max)	Vgs (Max)	Input Capacitance (Ciss) (Max)	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Max)	Power Dissipation (Max)	Rds On (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Drain to Source Voltage (Vdss)	Mounting Type	Package / Case
LITTELFUSE IXTA96P085T	96 A	P-Channel	MOSFET (Metal Oxide)	TO-263AA	4 V	15 V	13100 pF	10 V	180 nC	298 W	13 mOhm	-55 °C	150 °C	85 V	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB
LITTELFUSE IXTA96P085T	96 A	P-Channel	MOSFET (Metal Oxide)	TO-263AA	4 V	15 V	13100 pF	10 V	180 nC	298 W	13 mOhm	-55 °C	150 °C	85 V	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB
LITTELFUSE IXTA96P085T-TRL	96 A	P-Channel	MOSFET (Metal Oxide)	TO-263AA	4 V	15 V	13100 pF	10 V	180 nC	298 W	13 mOhm	-55 °C	150 °C	85 V	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB
LITTELFUSE IXTA96P085T-TRL	96 A	P-Channel	MOSFET (Metal Oxide)	TO-263AA	4 V	15 V	13100 pF	10 V	180 nC	298 W	13 mOhm	-55 °C	150 °C	85 V	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB

Pricing

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

IXTA96P085T | Datasheet

Datasheet