TSM190N08CZ C0G

Taiwan Semiconductor Corporation

TSM190N08CZ C0G TAIWAN SEMICONDUCTOR MOSFETS TRANSISTOR N-CH 75V 17A 3-PIN(3+TAB) TO-220 TUBE - ARROW.COM

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Taiwan Semiconductor Corporation

TSM190N08CZ C0G TAIWAN SEMICONDUCTOR MOSFETS TRANSISTOR N-CH 75V 17A 3-PIN(3+TAB) TO-220 TUBE - ARROW.COM

Technical Specifications

Parameters and characteristics for this part

Specification	TSM190N08CZ C0G

Current - Continuous Drain (Id) @ 25°C	190 A
Drain to Source Voltage (Vdss)	75 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	160 nC
Input Capacitance (Ciss) (Max) @ Vds	8600 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	250 W
Rds On (Max) @ Id, Vgs	4.2 mOhm
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Vgs(th) (Max) @ Id	Package / Case	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Supplier Device Package	Technology	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs
Taiwan Semiconductor Corporation TSM190N08CZ C0G	160 nC	10 V	N-Channel	8600 pF	20 V	4 V	TO-220-3	190 A	Through Hole	TO-220	MOSFET (Metal Oxide)	75 V	-55 °C	150 °C	250 W	4.2 mOhm

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General part information

N-Channel 75 V 190A (Tc) 250W (Tc) Through Hole TO-220

Technical documentation and resources