Infineon´s XENSIVTMTLE4966-2G is an integrated circuit dual Hall-effect sensor designed specifically for highly accurate applications. Precise magnetic switching points and high temperature stability are achieved by active compensation circuits and chopper techniques on chip. The sensor provides two independent speed outputs at Q1 and Q2 with the status (high or low) corresponding to the magnetic field value at the respective Hall element H1 and H2. Both Hall elements have the identical thresholds for BOP and BRP (BOP1 = BOP2 and BRP1 = BRP2). For positive magnetic fields (south pole) exceeding the threshold BOP1 and/or BOP2 the corresponding output Q1 and/or Q2 is low, whereas for negative magnetic fields (north pole) lower than BRP the output switches to high. Due to the spatial distance of the two Hall elements on the chip (d = 1.45mm) the two output signals will show a phase difference in case the sensor is used with a rotating magnetized pole wheel.