STI6N95K5

Obsolete

STMicroelectronics

TRANS MOSFET N-CH 950V 9A 3-PIN(3+TAB) I2PAK TUBE

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Obsolete

STMicroelectronics

TRANS MOSFET N-CH 950V 9A 3-PIN(3+TAB) I2PAK TUBE

Technical Specifications

Parameters and characteristics for this part

Specification	STI6N95K5

Current - Continuous Drain (Id) @ 25°C	9 A
Drain to Source Voltage (Vdss)	950 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	13 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	450 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max)	90 W
Rds On (Max) @ Id, Vgs	1.25 Ohm
Supplier Device Package	TO-262 (I2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

Part	Input Capacitance (Ciss) (Max) @ Vds [Max]	FET Type	Mounting Type	Package / Case	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Supplier Device Package	Vgs(th) (Max) @ Id	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)
STMicroelectronics STI6N95K5	450 pF	N-Channel	Through Hole	I2PAK TO-262-3 Long Leads TO-262AA	9 A	90 W	1.25 Ohm	TO-262 (I2PAK)	5 V	MOSFET (Metal Oxide)	13 nC	30 V	10 V	-55 °C	150 °C	950 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 950 V 9A (Tc) 90W (Tc) Through Hole TO-262 (I2PAK)

Technical documentation and resources