Specification	IRFD010PBF

Current - Continuous Drain (Id) (Tc)	1.7 A
Drain to Source Voltage (Vdss)	50 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	13 nC
Input Capacitance (Ciss) (Max)	250 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package Length	0.3 in
Package Name	4-HVMDIP, 4-DIP
Package Width	7.62 mm
Power Dissipation (Max)	1 W
Rds On (Max)	200 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

IRFD010 Series

Part	Power Dissipation (Max)	Vgs (Max)	Vgs(th) (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Current - Continuous Drain (Id) (Tc)	Technology	Mounting Type	Input Capacitance (Ciss) (Max)	FET Type	Gate Charge (Max)	Rds On (Max)	Package Name	Drain to Source Voltage (Vdss)	Package Width	Package Length	Drive Voltage (Max Rds On, Min Rds On)
Vishay Dale IRFD010PBF	1 W	20 V	4 V	-55 °C	150 °C	1.7 A	MOSFET (Metal Oxide)	Through Hole	250 pF	N-Channel	13 nC	200 mOhm	4-DIP 4-HVMDIP	50 V	7.62 mm	0.3 in	10 V

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