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IPT60R080G7XTMA1 - ONSEMI FDBL0260N100

IPT60R080G7XTMA1

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Infineon Technologies

COOLMOS™ G7 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; TOLL HSOF-8 PACKAGE; 80 MOHM; HIGHEST PERFORMANCE

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IPT60R080G7XTMA1 - ONSEMI FDBL0260N100

IPT60R080G7XTMA1

Active
Infineon Technologies

COOLMOS™ G7 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; TOLL HSOF-8 PACKAGE; 80 MOHM; HIGHEST PERFORMANCE

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationIPT60R080G7XTMA1
Current - Continuous Drain (Id) @ 25°C29 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs42 nC
Input Capacitance (Ciss) (Max) @ Vds1640 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-40 °C
Package / Case8-PowerSFN
Power Dissipation (Max)167 W
Rds On (Max) @ Id, Vgs80 mOhm
Supplier Device PackagePG-HSOF-8-2
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 5.07
10$ 3.43
100$ 2.96
Digi-Reel® 1$ 5.07
10$ 3.43
100$ 2.96
Tape & Reel (TR) 2000$ 2.96
NewarkEach (Supplied on Cut Tape) 1$ 6.54
10$ 4.69
25$ 4.26
50$ 3.85
100$ 3.42
250$ 3.22
500$ 3.03

Description

General part information

IPT60R080 Series

For the first time theCoolMOS™ C7 Gold superjunction MOSFET series (G7)brings together the benefits of the improved 600V CoolMOS™ C7 Gold technology, 4pin Kelvin source capability and the improved thermal properties of the TO-Leadless (TOLL) package to enable a possible SMD solution for high current hard switching topologies such as power factor correction (PFC) up to 3kW and for resonant circuits such as high end LLC.

Documents

Technical documentation and resources