
IPT60R080G7XTMA1
ActiveCOOLMOS™ G7 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; TOLL HSOF-8 PACKAGE; 80 MOHM; HIGHEST PERFORMANCE
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IPT60R080G7XTMA1
ActiveCOOLMOS™ G7 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; TOLL HSOF-8 PACKAGE; 80 MOHM; HIGHEST PERFORMANCE
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Technical Specifications
Parameters and characteristics for this part
| Specification | IPT60R080G7XTMA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 29 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 42 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1640 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | 8-PowerSFN |
| Power Dissipation (Max) | 167 W |
| Rds On (Max) @ Id, Vgs | 80 mOhm |
| Supplier Device Package | PG-HSOF-8-2 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IPT60R080 Series
For the first time theCoolMOS™ C7 Gold superjunction MOSFET series (G7)brings together the benefits of the improved 600V CoolMOS™ C7 Gold technology, 4pin Kelvin source capability and the improved thermal properties of the TO-Leadless (TOLL) package to enable a possible SMD solution for high current hard switching topologies such as power factor correction (PFC) up to 3kW and for resonant circuits such as high end LLC.
Documents
Technical documentation and resources