BCR 116L3 E6327

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Infineon Technologies

TRANS PREBIAS NPN 50V TSLP-3

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Unknown

Infineon Technologies

TRANS PREBIAS NPN 50V TSLP-3

Technical Specifications

Parameters and characteristics for this part

Specification	BCR 116L3 E6327

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	70
Frequency - Transition	150 MHz
Mounting Type	Surface Mount
Package / Case	SOT-883, SC-101
Power - Max [Max]	250 mW
Resistor - Base (R1)	4.7 kOhms
Resistor - Emitter Base (R2)	47000 Ohms
Supplier Device Package	PG-TSLP-3-4
Transistor Type	NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Current - Collector (Ic) (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Resistor - Emitter Base (R2)	Frequency - Transition	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Package / Case	Mounting Type	Transistor Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Resistor - Base (R1)	Supplier Device Package	Power - Max [Max]	Current - Collector Cutoff (Max) [Max]
Infineon Technologies BCR 116S E6727	100 mA	300 mV	47000 Ohms	150 MHz	70	6-VSSOP SC-88 SOT-363	Surface Mount	2 NPN - Pre-Biased (Dual)	50 V	4.7 kOhms	PG-SOT363-PO	250 mW
Infineon Technologies BCR 116L3 E6327	100 mA	300 mV	47000 Ohms	150 MHz	70	SC-101 SOT-883	Surface Mount	NPN - Pre-Biased	50 V	4.7 kOhms	PG-TSLP-3-4	250 mW	100 nA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 150 MHz 250 mW Surface Mount PG-TSLP-3-4

Technical documentation and resources