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BSZ021N04LS6ATMA1 - TSDSON-8

BSZ021N04LS6ATMA1

Active
Infineon Technologies

OPTIMOS™ 6 N-CHANNEL POWER MOSFET 40 V ; PQFN 3.3 X 3.3 FUSED LEAD PACKAGE; 2.1 MOHM;

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BSZ021N04LS6ATMA1 - TSDSON-8

BSZ021N04LS6ATMA1

Active
Infineon Technologies

OPTIMOS™ 6 N-CHANNEL POWER MOSFET 40 V ; PQFN 3.3 X 3.3 FUSED LEAD PACKAGE; 2.1 MOHM;

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationBSZ021N04LS6ATMA1
Current - Continuous Drain (Id) @ 25°C40 A, 25 A
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs31 nC
Input Capacitance (Ciss) (Max) @ Vds2700 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / Case8-PowerVDFN
Power Dissipation (Max)83 W, 2.5 W
Rds On (Max) @ Id, Vgs2.1 mOhm
Supplier Device PackagePG-TSDSON-8-34
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2.3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.90
10$ 1.72
25$ 1.53
100$ 1.38
250$ 1.23
500$ 1.07
1000$ 0.89
Digi-Reel® 1$ 1.90
10$ 1.72
25$ 1.53
100$ 1.38
250$ 1.23
500$ 1.07
1000$ 0.89
Tape & Reel (TR) 5000$ 0.80
10000$ 0.77

Description

General part information

BSZ021 Series

TheOptiMOS™ 6 power MOSFET 40 V familyis optimized for a variety of applications and circuits, such as synchronous rectification in switched mode power supplies (SMPS) in servers, desktop PCs, wireless chargers, quick chargers and ORing circuits. Improvements in on-state resistance (RDS(on)) and figure of merits (FOM - RDS(on)x Qgand Qgd) enable designers to increase efficiency, allowing easier thermal design and less paralleling, leading to system cost reduction.

Documents

Technical documentation and resources