AOTF2610L

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Alpha & Omega Semiconductor Inc.

MOSFET N-CH 60V 9A/35A TO220-3F

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Alpha & Omega Semiconductor Inc.

MOSFET N-CH 60V 9A/35A TO220-3F

Technical Specifications

Parameters and characteristics for this part

Specification	AOTF2610L

Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	30 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	2007 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	2.1 W, 31 W
Rds On (Max) @ Id, Vgs	10.7 mOhm
Supplier Device Package	TO-220F
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Vgs(th) (Max) @ Id	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Supplier Device Package	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Technology	Vgs (Max)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Package / Case	Drive Voltage (Max Rds On, Min Rds On)
Alpha & Omega Semiconductor Inc. AOTF2610L	2.5 V	N-Channel	-55 °C	175 ░C	60 V	TO-220F	2.1 W 31 W	2007 pF	MOSFET (Metal Oxide)	20 V	Through Hole	30 nC	10.7 mOhm	TO-220-3 Full Pack	4.5 V 10 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1000	$ 0.62