IPW65R037C6FKSA1

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Infineon Technologies

POWER MOSFET, N CHANNEL, 83.2 A, 650 V, 0.033 OHM, 10 V, 3 V ROHS COMPLIANT: YES

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Infineon Technologies

POWER MOSFET, N CHANNEL, 83.2 A, 650 V, 0.033 OHM, 10 V, 3 V ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

Specification	IPW65R037C6FKSA1

Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	330 nC
Input Capacitance (Ciss) (Max) @ Vds	7240 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	500 W
Rds On (Max) @ Id, Vgs	37 mOhm
Supplier Device Package	PG-TO247-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Technology	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Supplier Device Package
Infineon Technologies IPW65R037C6FKSA1	-55 °C	150 °C	N-Channel	3.5 V	37 mOhm	MOSFET (Metal Oxide)	TO-247-3	7240 pF	10 V	Through Hole	330 nC	20 V	500 W	650 V	PG-TO247-3

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 650 V 83.2A (Tc) 500W (Tc) Through Hole PG-TO247-3

Technical documentation and resources