Specification	SIZ322DT-T1-GE3

Channel Count	2
Configuration	N-Channel
Configuration - Features	Dual
Current - Continuous Drain (Id) (Tc)	30 A
Drain to Source Voltage (Vdss)	25 V
Gate Charge (Max)	20.1 nC
Input Capacitance (Ciss) (Max)	950 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	8-PowerWDFN
Package Length	3 mm
Package Name	8-Power33
Package Width	3 mm
Power - Max (Tc)	16.7 W
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max)	2.4 V

SIZ322 Series

Part	Package Name	Package Length	Package Width	Technology	Package / Case	Vgs(th) (Max)	Current - Continuous Drain (Id) (Tc)	Operating Temperature (Min)	Operating Temperature (Max)	Input Capacitance (Ciss) (Max)	Gate Charge (Max)	Drain to Source Voltage (Vdss)	Mounting Type	Power - Max (Tc)	Channel Count	Configuration	Configuration - Features
Vishay Dale SIZ322DT-T1-GE3	8-Power33	3 mm	3 mm	MOSFET (Metal Oxide)	8-PowerWDFN	2.4 V	30 A	-55 °C	150 °C	950 pF	20.1 nC	25 V	Surface Mount	16.7 W	2	N-Channel	Dual

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