APT2X60DC60J

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Microsemi Corporation

DIODE MOD SIC SCHOT 600V SOT227

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Microsemi Corporation

DIODE MOD SIC SCHOT 600V SOT227

Technical Specifications

Parameters and characteristics for this part

Specification	APT2X60DC60J

Current - Average Rectified (Io) (per Diode)	60 A
Current - Reverse Leakage @ Vr	1.2 mA
Diode Configuration	2 Independent
Mounting Type	Chassis Mount
Package / Case	SOT-227-4, miniBLOC
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	SOT-227
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.8 V

Part	Package / Case	Reverse Recovery Time (trr)	Diode Configuration	Speed	Voltage - Forward (Vf) (Max) @ If	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Supplier Device Package	Technology	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io) (per Diode)	Speed
Microsemi Corporation APT2X60DC120J	SOT-227-4 miniBLOC	0 ns	2 Independent	No Recovery Time	1.8 V	1.2 kV	Chassis Mount	SOT-227	SiC (Silicon Carbide) Schottky	1.2 mA	60 A
Microsemi Corporation APT2X60DC60J	SOT-227-4 miniBLOC	0 ns	2 Independent	No Recovery Time	1.8 V	600 V	Chassis Mount	SOT-227	SiC (Silicon Carbide) Schottky	1.2 mA	60 A
Microsemi Corporation APT2X60D20J	SOT-227-4 miniBLOC	31 ns	2 Independent		1.3 V	200 V	Chassis Mount	ISOTOP®	Standard	250 µA	60 A	200 mA 500 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode Array 2 Independent 600 V 60A Chassis Mount SOT-227-4, miniBLOC

Technical documentation and resources

No documents available