ZXM62N03GTA
ObsoleteDiodes Inc
NRND = NOT RECOMMENDED FOR NEW DESIGN
Deep-Dive with AI
Search across all available documentation for this part.
ZXM62N03GTA
ObsoleteDiodes Inc
NRND = NOT RECOMMENDED FOR NEW DESIGN
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | ZXM62N03GTA |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 4.7 A, 3.4 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 9.6 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 380 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-261AA, TO-261-4 |
| Power Dissipation (Max) [Max] | 2 W |
| Rds On (Max) @ Id, Vgs | 110 mOhm |
| Supplier Device Package | SOT-223-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 1 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
ZXM62N03G Series
This new generation of High Density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.
Documents
Technical documentation and resources