TQM130NB06CR RLG

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Taiwan Semiconductor Corporation

MOSFET, N-CH, 60V, 50A, PDFN56 ROHS COMPLIANT: YES

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Active

Taiwan Semiconductor Corporation

MOSFET, N-CH, 60V, 50A, PDFN56 ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

Specification	TQM130NB06CR RLG

Current - Continuous Drain (Id) @ 25°C	50 A, 10 A
Drain to Source Voltage (Vdss)	60 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	40 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	2234 pF
Mounting Type	Wettable Flank, Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	3.1 W, 83 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	13 mOhm
Supplier Device Package	8-PDFNU (5x6)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.8 V

Part	Current - Continuous Drain (Id) @ 25°C	Technology	Qualification	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Grade	Mounting Type	Supplier Device Package	Vgs(th) (Max) @ Id	Power Dissipation (Max)	FET Type	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]
Taiwan Semiconductor Corporation TQM130NB06CR RLG	10 A 50 A	MOSFET (Metal Oxide)	AEC-Q101	-55 °C	175 ░C	20 V	Automotive	Surface Mount Wettable Flank	8-PDFNU (5x6)	3.8 V	3.1 W 83 W	N-Channel	8-PowerTDFN	2234 pF	60 V	13 mOhm	40 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 60 V 10A (Ta), 50A (Tc) 3.1W (Ta), 83W (Tc) Surface Mount, Wettable Flank 8-PDFNU (5x6)

Technical documentation and resources