DF1000R17IE4DB2BOSA1

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Infineon Technologies

IGBT MODULE 1700V 6250W

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Infineon Technologies

IGBT MODULE 1700V 6250W

Technical Specifications

Parameters and characteristics for this part

Specification	DF1000R17IE4DB2BOSA1

Configuration	Single
Current - Collector Cutoff (Max) [Max]	5 mA
Input	Standard
Input Capacitance (Cies) @ Vce	81 nF
Mounting Type	Chassis Mount
NTC Thermistor	True
Package / Case	Module
Power - Max [Max]	6250 W
Supplier Device Package	Module
Vce(on) (Max) @ Vge, Ic	2.45 V
Voltage - Collector Emitter Breakdown (Max)	1700 V

Part	Voltage - Collector Emitter Breakdown (Max)	Configuration	Mounting Type	IGBT Type	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	Input Capacitance (Cies) @ Vce	Package / Case	Power - Max [Max]	Current - Collector Cutoff (Max) [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Vce(on) (Max) @ Vge, Ic	Input
Infineon Technologies DF1000R17IE4PBPSA1	1700 V	Single Chopper	Chassis Mount	Trench Field Stop	1 kA	AG-PRIME3-1	81 nF	Module	1000000 W	5 mA	150 °C	-40 °C	2.45 V	Standard
Infineon Technologies DF1000R17IE4DB2BOSA1	1700 V	Single	Chassis Mount			Module	81 nF	Module	6250 W	5 mA			2.45 V	Standard
Infineon Technologies DF1000R17IE4BOSA1	1700 V	Single	Chassis Mount			Module	81 nF	Module	6250 W	5 mA			2.45 V	Standard

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

IGBT Module Single 1700 V 6250 W Chassis Mount Module

Technical documentation and resources