MSCSM170AM058CT6LIAG

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Microchip Technology

1700V, 5.8 MOHM, SP6LI, PHASE LEG MSIC™ MOSFET MODULE

MSCSM170AM058CT6LIAG

Active

Microchip Technology

1700V, 5.8 MOHM, SP6LI, PHASE LEG MSIC™ MOSFET MODULE

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Description

General part information

MSCSM170 Series

* SiC Power MOSFET

* Low RDS(on)

* High temperature performance

Technical Specifications

Parameters and characteristics for this part

Specification	MSCSM170AM058CT6LIAG

Channel Count	2
Configuration	N Channel
Configuration - Features	Phase Leg
Current - Continuous Drain (Id) (Tc)	353 A
Drain to Source Voltage (Vdss)	1700 V
Gate Charge (Max)	1068 nC
Input Capacitance (Ciss) (Max)	19800 pF
Mounting Type	Chassis Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-40 °C
Package / Case	Module
Power - Max (Tc)	1642 W
Rds On (Max)	7.5 mOhm
Technology	Silicon Carbide (SiC)
Vgs(th) (Max)	3.3 V

MSCSM170 Series

1700V, 17.5 mOhm, SP3F, Dual Common Source mSiC™ MOSFET Module

Part	Operating Temperature (Max)	Operating Temperature (Min)	Current - Continuous Drain (Id) (Tc)	Vgs(th) (Max)	Technology	Package / Case	Power - Max (Tc)	Mounting Type	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max)	Channel Count	Configuration - Features	Configuration	Gate Charge (Max)	Rds On (Max)	Package Name
Microchip Technology MSCSM170AM45CT1AG	175 °C	-40 °C	64 A	3.2 V	Silicon Carbide (SiC)	Module	319 W	Chassis Mount	1700 V	3300 pF	2	Phase Leg	N Channel	178 nC	45 mOhm
Microchip Technology MSCSM170TLM11CAG	175 °C	-40 °C	238 A	3.2 V	Silicon Carbide (SiC)	Module	1114 W	Chassis Mount	1700 V	13200 pF	4	Three Level Inverter	N-Channel	712 nC 712 nC	11.3 mOhm	SP6C
Microchip Technology MSCSM170AM039CT6AG	175 °C	-40 °C	523 A	3.3 V	Silicon Carbide (SiC)	Module	2.4 kW	Chassis Mount	1700 V	29700 pF	2	Phase Leg	N Channel	1602 nC	5 mOhm
Microchip Technology MSCSM170AM11CT3AG	175 °C	-40 °C	240 A	3.2 V	Silicon Carbide (SiC)	Module	1.14 kW 1140 W	Chassis Mount	1700 V	13200 pF	2	Phase Leg	N Channel	712 nC 712 nC	11.3 mOhm
Microchip Technology MSCSM170AM058CD3AG	175 °C	-40 °C	353 A	3.3 V	Silicon Carbide (SiC)	Module	1642 W	Chassis Mount	1700 V	19800 pF	2	Phase Leg	N Channel	1068 nC	7.5 mOhm
Microchip Technology MSCSM170AM23CT1AG	175 °C	-40 °C	124 A	3.2 V	Silicon Carbide (SiC)	Module	602 W	Chassis Mount	1700 V	6600 pF	2	Phase Leg	N Channel	356 nC	22.5 mOhm
Microchip Technology MSCSM170HM12CAG	175 °C	-40 °C	179 A	3.2 V	Silicon Carbide (SiC)	Module	843 W	Chassis Mount	1700 V	9900 pF 9900 pF	4	Full Bridge	N-Channel	534 nC	15 mOhm
Microchip Technology MSCSM170AM058CT6LIAG	175 °C	-40 °C	353 A	3.3 V	Silicon Carbide (SiC)	Module	1642 W	Chassis Mount	1700 V	19800 pF	2	Phase Leg	N Channel	1068 nC	7.5 mOhm
Microchip Technology MSCSM170AM058CT6AG	175 °C	-40 °C	353 A	3.3 V	Silicon Carbide (SiC)	Module	1642 W	Chassis Mount	1700 V	19800 pF	2	Phase Leg	N Channel	1068 nC	7.5 mOhm
Microchip Technology MSCSM170TLM15CAG	175 °C	-40 °C	179 A	3.2 V	Silicon Carbide (SiC)	Module	843 W	Chassis Mount	1700 V	9900 pF 9900 pF	4	Three Level Inverter	N-Channel	534 nC	15 mOhm	SP6C