WND45P16WQ

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WeEn Semiconductors

DIODE GEN PURP 1.6KV 45A TO247-2

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WeEn Semiconductors

DIODE GEN PURP 1.6KV 45A TO247-2

Technical Specifications

Parameters and characteristics for this part

Specification	WND45P16WQ

Current - Average Rectified (Io)	45 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Through Hole
Operating Temperature - Junction	150 ¯C
Package / Case	TO-247-2
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	TO-247-2
Technology	Standard
Voltage - Forward (Vf) (Max) @ If	1.4 V

DIODE GEN PURP 1.6KV 45A TO247-2

Part	Operating Temperature - Junction	Voltage - Forward (Vf) (Max) @ If	Mounting Type	Current - Average Rectified (Io)	Supplier Device Package	Package / Case	Current - Reverse Leakage @ Vr	Technology	Speed	Speed
WeEn Semiconductors WND45P16WQ	150 ¯C	1.4 V	Through Hole	45 A	TO-247-2	TO-247-2	10 µA	Standard	Standard Recovery >500ns	200 mA

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General part information

Diode 1600 V 45A Through Hole TO-247-2

Technical documentation and resources

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