STB12NK80ZT4
ActiveN-CHANNEL 800 V, 0.65 OHM, 10.5 A ZENER PROTECTED SUPERMESH(TM) POWER MOSFET IN D2PAK PACKAGE
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STB12NK80ZT4
ActiveN-CHANNEL 800 V, 0.65 OHM, 10.5 A ZENER PROTECTED SUPERMESH(TM) POWER MOSFET IN D2PAK PACKAGE
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Technical Specifications
Parameters and characteristics for this part
| Specification | STB12NK80ZT4 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 10.5 A |
| Drain to Source Voltage (Vdss) | 800 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 87 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 2620 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263AB, TO-263-3 |
| Power Dissipation (Max) [Max] | 190 W |
| Rds On (Max) @ Id, Vgs | 750 mOhm |
| Supplier Device Package | D2PAK |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 4.5 V |
STB12NK80Z Series
N-channel 800 V, 0.65 Ohm, 10.5 A Zener protected SuperMESH(TM) Power MOSFET in D2PAK package
| Part | Rds On (Max) @ Id, Vgs | Drain to Source Voltage (Vdss) | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) | FET Type | Package / Case | Operating Temperature | Vgs(th) (Max) @ Id | Technology | Power Dissipation (Max) [Max] | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Gate Charge (Qg) (Max) @ Vgs [Max] | Operating Temperature [Min] | Operating Temperature [Max] | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
STMicroelectronics | 380 mOhm | 500 V | Surface Mount | 10 V | D2PAK | 11 A | 25 V | N-Channel | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 150 °C | 4 V | MOSFET (Metal Oxide) | 100 W | 940 pF | 30 nC | ||||
STMicroelectronics | 750 mOhm | 800 V | Surface Mount | 10 V | D2PAK | 10.5 A | 30 V | N-Channel | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 4.5 V | MOSFET (Metal Oxide) | 190 W | 2620 pF | 87 nC | -55 °C | 150 °C | |||
STMicroelectronics | 410 mOhm | 600 V | Through Hole | 10 V | I2PAK | 10 A | 25 V | N-Channel | I2PAK TO-262-3 Long Leads TO-262AA | 4 V | MOSFET (Metal Oxide) | 960 pF | 30.5 nC | -55 °C | 150 °C | 90 W |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STB12NK80Z Series
These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerMESH™ layout. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.
Documents
Technical documentation and resources