STPSC1206D

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STMicroelectronics

DIODE SIL CARB 600V 12A TO220AC

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STMicroelectronics

DIODE SIL CARB 600V 12A TO220AC

Technical Specifications

Parameters and characteristics for this part

Specification	STPSC1206D

Capacitance @ Vr, F	750 pF
Current - Average Rectified (Io)	12 A
Current - Reverse Leakage @ Vr	150 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	TO-220-2
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	TO-220AC
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	600 V

DIODE SIL CARB 600V 12A TO220AC

Part	Supplier Device Package	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Technology	Package / Case	Capacitance @ Vr, F	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Average Rectified (Io)	Speed	Reverse Recovery Time (trr)	Mounting Type	Current - Reverse Leakage @ Vr
STMicroelectronics STPSC1206D	TO-220AC	-40 °C	175 ░C	SiC (Silicon Carbide) Schottky	TO-220-2	750 pF	600 V	12 A	No Recovery Time	0 ns	Through Hole	150 µA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 600 V 12A Through Hole TO-220AC

Technical documentation and resources

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