JAN2N2218AL

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Microchip Technology

BIPOLAR TRANSISTORS - BJT 30V 800MA 800MW NPN LONG-LEAD SMALL-SIGNAL BJT THT

JAN2N2218AL

Active

Microchip Technology

BIPOLAR TRANSISTORS - BJT 30V 800MA 800MW NPN LONG-LEAD SMALL-SIGNAL BJT THT

Description Specifications Series Pricing CAD Documents

Description

General part information

2N2218 Series

This specification covers the performance requirements for NPN, silicon, switching, 2N2218 and 2N2219 transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500/251. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements. The device packages for the encapsulated device types are as follows: TO-39 and TO-5.

Technical Specifications

Parameters and characteristics for this part

Specification	JAN2N2218AL

Current - Collector (Ic) (Max)	800 mA
Current - Collector Cutoff (Max)	10 nA
DC Current Gain (hFE) (Min)	40
Grade	Military
Mounting Type	Through Hole
Operating Temperature (Max)	200 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-5-3 Metal Can, TO-205AA
Package Name	TO-5
Power - Max	800 mW
Qualification	251, MIL-PRF-19500
Transistor Type	NPN
Vce Saturation (Max)	1 V
Voltage - Collector Emitter Breakdown (Max)	50 V

2N2218 Series

NPN Silicon Switching 30V to 50V, 0.8A

Part	DC Current Gain (hFE) (Min)	Current - Collector (Ic) (Max)	Current - Collector Cutoff (Max)	Power - Max	Package Name	Mounting Type	Vce Saturation (Max)	Transistor Type	Operating Temperature (Min)	Operating Temperature (Max)	Package / Case	Voltage - Collector Emitter Breakdown (Max)	Qualification	Grade
Microchip Technology 2N2218A	40	800 mA	10 nA	800 mW	TO-39 (TO-205AD)	Through Hole	1.6 V	NPN	-55 °C	200 °C	TO-205AD TO-39-3 Metal Can	30 V
Microchip Technology JAN2N2218	40	800 mA	10 nA	800 mW	TO-39 (TO-205AD)	Through Hole	1.6 V	NPN	-55 °C	200 °C	TO-205AD TO-39-3 Metal Can	30 V	251 MIL-PRF-19500	Military
Microchip Technology JANSR2N2218	40	800 mA	10 nA	800 mW	TO-39 (TO-205AD)	Through Hole	1.6 V	NPN	-55 °C	200 °C	TO-205AD TO-39-3 Metal Can	50 V	251 MIL-PRF-19500	Military
Microchip Technology 2N2218AL	40	800 mA	10 nA	800 mW	TO-5	Through Hole	1 V	NPN	-55 °C	200 °C	TO-205AA TO-5-3 Metal Can	50 V
Microchip Technology JANTX2N2218AL	40	800 mA	10 nA	800 mW	TO-5	Through Hole	1 V	NPN	-55 °C	200 °C	TO-205AA TO-5-3 Metal Can	50 V	251 MIL-PRF-19500	Military
Microchip Technology JAN2N2218AL	40	800 mA	10 nA	800 mW	TO-5	Through Hole	1 V	NPN	-55 °C	200 °C	TO-205AA TO-5-3 Metal Can	50 V	251 MIL-PRF-19500	Military
Microchip Technology JANSR2N2218AL	35	800 mA	10 nA	800 mW	TO-5AA	Through Hole	1 V	NPN	-65 °C	200 °C	TO-205AA TO-5-3 Metal Can	50 V	251 MIL-PRF-19500	Military
Microchip Technology JANTXV2N2218	40	800 mA	10 nA	800 mW	TO-39 (TO-205AD)	Through Hole	1.6 V	NPN	-55 °C	200 °C	TO-205AD TO-39-3 Metal Can	30 V	251 MIL-PRF-19500	Military
Microchip Technology 2N2218	40	800 mA	10 nA	800 mW	TO-39 (TO-205AD)	Through Hole	1.6 V	NPN	-55 °C	200 °C	TO-205AD TO-39-3 Metal Can	30 V
Microchip Technology JANTXV2N2218AL	40	800 mA	10 nA	800 mW	TO-5	Through Hole	1 V	NPN	-55 °C	200 °C	TO-205AA TO-5-3 Metal Can	50 V	251 MIL-PRF-19500	Military

Pricing

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

JAN2N2218AL | Datasheet

Product Change Notice EN

2N2218A and 2N2219A