L6387

Obsolete

STMicroelectronics

IC GATE DRVR HALF-BRIDG 8MINIDIP

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L6387

Obsolete

STMicroelectronics

IC GATE DRVR HALF-BRIDG 8MINIDIP

Deep-Dive with AI

DocumentsDatasheet

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	L6387

Channel Type	Independent
Current - Peak Output (Source, Sink) [custom]	400 mA
Current - Peak Output (Source, Sink) [custom]	650 mA
Driven Configuration	Half-Bridge
Gate Type	N-Channel MOSFET, IGBT
High Side Voltage - Max (Bootstrap) [Max]	600 V
Input Type	Inverting
Logic Voltage - VIL, VIH	1.5 V, 3.6 V
Mounting Type	Through Hole
Number of Drivers	2
Operating Temperature [Max]	125 ¯C
Operating Temperature [Min]	-45 °C
Package / Case	0.3 in
Package / Case	8-DIP
Package / Case	7.62 mm
Rise / Fall Time (Typ) [custom]	30 ns
Rise / Fall Time (Typ) [custom]	50 ns
Supplier Device Package	8-Mini DIP
Voltage - Supply [Max]	17 V

L6387E Series

High voltage high and low-side driver

Part	Supplier Device Package	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Gate Type	Input Type	Channel Type	Driven Configuration	Mounting Type	Voltage - Supply [Max]	Package / Case	Package / Case	Package / Case	Logic Voltage - VIL, VIH	Number of Drivers	Operating Temperature [Max]	Operating Temperature [Min]	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	High Side Voltage - Max (Bootstrap) [Max]	Package / Case [y]	Package / Case [x]
STMicroelectronics L6387	8-Mini DIP	30 ns	50 ns	IGBT N-Channel MOSFET	Inverting	Independent	Half-Bridge	Through Hole	17 V	0.3 in	8-DIP	7.62 mm	1.5 V 3.6 V	2	125 ¯C	-45 °C	400 mA	650 mA	600 V
STMicroelectronics L6387ED	8-SOIC	30 ns	50 ns	IGBT MOSFET	Inverting	Independent	Half-Bridge	Surface Mount	17 V		8-SOIC		1.5 V 3.6 V	2	125 ¯C	-45 °C	400 mA	650 mA	600 V	3.9 mm	0.154 in

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

L6387E Series

The L6387E is a simple and compact high voltage gate driver, manufactured with the BCD™ "offline" technology, and able to drive a half-bridge of power MOSFET or IGBT devices. The high-side (floating) section is enabled to work with voltage rail up to 600 V. Both device outputs can independently sink and source 650 mA and 400 mA respectively and cannot be simultaneously driven high thanks to an integrated interlocking function.

The L6387E device provides two input pins and two output pins and guarantees the outputs toggle in phase with inputs. The logic inputs are CMOS/TTL compatible to ease the interfacing with controlling devices.

The L6387E features the UVLO protection on the VCCsupply voltage and integrates the bootstrap diode, allowing a more compact and reliable solution.

Documents

Technical documentation and resources