IRF7749L1TRPBF

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Infineon Technologies

POWER MOSFET, N CHANNEL, 60 V, 375 A, 0.0011 OHM, DIRECTFET L8, SURFACE MOUNT

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Infineon Technologies

POWER MOSFET, N CHANNEL, 60 V, 375 A, 0.0011 OHM, DIRECTFET L8, SURFACE MOUNT

Technical Specifications

Parameters and characteristics for this part

Specification	IRF7749L1TRPBF

Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	300 nC
Input Capacitance (Ciss) (Max) @ Vds	12320 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	DirectFET™ Isometric L8
Power Dissipation (Max)	3.3 W, 125 W
Rds On (Max) @ Id, Vgs	1.5 mOhm
Supplier Device Package	DirectFET™ Isometric L8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Vgs (Max)	Technology	Rds On (Max) @ Id, Vgs	Supplier Device Package	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Mounting Type
Infineon Technologies IRF7749L1TRPBF	N-Channel	300 nC	-55 °C	175 ░C	10 V	12320 pF	DirectFET™ Isometric L8	20 V	MOSFET (Metal Oxide)	1.5 mOhm	DirectFET™ Isometric L8	3.3 W 125 W	4 V	60 V	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 60 V 33A (Ta), 200A (Tc) 3.3W (Ta), 125W (Tc) Surface Mount DirectFET™ Isometric L8