Zenode.ai Logo

Description

General part information

JANTX2N2222AP-Transistor-PIND Series

This specification covers the performance requirements for NPN, silicon, switching 2N2221 and 2N2222 transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device type as specified in MIL-PRF-19500/255 and two levels of product assurance (JANHC and JANKC) are provided for each unencapsulated device type. RHA level designators "E", "K", "U", "M", "D", "P", "L", "R", "F", "G" and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.

Technical Specifications

Parameters and characteristics for this part

SpecificationJANTX2N2222AP
Current - Collector (Ic) (Max)800 mA
Current - Collector Cutoff (Max)50 nA
DC Current Gain (hFE) (Min)100
Mounting TypeThrough Hole
Operating Temperature (Max)200 °C
Operating Temperature (Min)-65 °C
Package / CaseTO-18-3 Metal Can, TO-206AA
Package NameTO-18 (TO-206AA)
Power - Max0.5 W
Transistor TypeNPN
Vce Saturation (Max)1 V
Voltage - Collector Emitter Breakdown (Max)50 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Sign in to see pricing

Create a free account to access distributor pricing data.

CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources