BPW96C

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Vishay Semiconductor Opto Division

PHOTOTRANSISTOR 450 TO 1080 NM

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Vishay Semiconductor Opto Division

PHOTOTRANSISTOR 450 TO 1080 NM

Technical Specifications

Parameters and characteristics commom to parts in this series

Specification	BPW96C	BPW96 Series

Current - Collector (Ic) (Max) [Max]	50 mA	50 mA
Current - Dark (Id) (Max) [Max]	200 nA	200 nA
Mounting Type	Through Hole	Through Hole
Operating Temperature [Max]	100 °C	100 °C
Operating Temperature [Min]	-40 °C	-40 °C
Orientation	Top View	Top View
Package / Case	T 1 3/4, Radial	T 1 3/4, Radial
Package / Case [diameter]	5 mm	5 mm
Power - Max [Max]	150 mW	150 mW
Viewing Angle [custom]	40 °	40 °
Voltage - Collector Emitter Breakdown (Max) [Max]	70 V	70 V
Wavelength	850 nm	850 nm

SENSOR PHOTO 850NM TOP VIEW RAD

Part	Wavelength	Power - Max [Max]	Current - Collector (Ic) (Max) [Max]	Mounting Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case [diameter]	Package / Case	Orientation	Current - Dark (Id) (Max) [Max]	Viewing Angle [custom]
Vishay Semiconductor Opto Division BPW96	850 nm	150 mW	50 mA	Through Hole	70 V	100 °C	-40 °C	5 mm	Radial, T 1 3/4	Top View	200 nA	40 °
Vishay Semiconductor Opto Division BPW96C	850 nm	150 mW	50 mA	Through Hole	70 V	100 °C	-40 °C	5 mm	Radial, T 1 3/4	Top View	200 nA	40 °

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Phototransistors 850nm Top View Radial, 5mm Dia (T 1 3/4)

Technical documentation and resources