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STFW40N60M2 - STMICROELECTRONICS STFW40N60M2

STFW40N60M2

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STMicroelectronics

N-CHANNEL 600 V, 0.078 OHM TYP., 34 A MDMESH M2 POWER MOSFET IN TO-3PF PACKAGE

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STFW40N60M2 - STMICROELECTRONICS STFW40N60M2

STFW40N60M2

Active
STMicroelectronics

N-CHANNEL 600 V, 0.078 OHM TYP., 34 A MDMESH M2 POWER MOSFET IN TO-3PF PACKAGE

Technical Specifications

Parameters and characteristics for this part

SpecificationSTFW40N60M2
Current - Continuous Drain (Id) @ 25°C34 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs57 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]2500 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-3P-3 Full Pack
Power Dissipation (Max)63 W
Rds On (Max) @ Id, Vgs88 mOhm
Supplier Device PackageTO-3PF
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 5.79
30$ 4.59
120$ 3.93
510$ 3.50
1020$ 2.99
2010$ 2.82
NewarkEach 1$ 6.08
10$ 6.05
25$ 4.75
50$ 4.60
100$ 4.45
250$ 4.35
600$ 4.24

Description

General part information

STFW40N60M2 Series

These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics,rendering them suitable for the most demanding high efficiency converters.