STI40N65M2

Obsolete

STMicroelectronics

MOSFET N-CH 650V 32A I2PAK

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Obsolete

STMicroelectronics

MOSFET N-CH 650V 32A I2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	STI40N65M2

Current - Continuous Drain (Id) @ 25°C	32 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	56.5 nC
Input Capacitance (Ciss) (Max) @ Vds	2355 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max) [Max]	250 W
Rds On (Max) @ Id, Vgs	99 mOhm
Supplier Device Package	I2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	4 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Technology	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Mounting Type	FET Type	Power Dissipation (Max) [Max]	Vgs (Max)	Drain to Source Voltage (Vdss)	Package / Case	Vgs(th) (Max) @ Id	Operating Temperature	Gate Charge (Qg) (Max) @ Vgs [Max]
STMicroelectronics STI40N65M2	10 V	99 mOhm	32 A	MOSFET (Metal Oxide)	2355 pF	I2PAK	Through Hole	N-Channel	250 W	25 V	650 V	I2PAK TO-262-3 Long Leads TO-262AA	4 V	150 °C	56.5 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 650 V 32A (Tc) 250W (Tc) Through Hole I2PAK

Technical documentation and resources