AOT7S60L

Obsolete

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 7A TO220

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Obsolete

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 7A TO220

Technical Specifications

Parameters and characteristics for this part

Specification	AOT7S60L

Current - Continuous Drain (Id) @ 25°C	7 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	8.2 nC
Input Capacitance (Ciss) (Max) @ Vds	372 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	104 W
Rds On (Max) @ Id, Vgs	600 mOhm
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	3.9 V

Part	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Technology	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Supplier Device Package	Vgs (Max)	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Package / Case
Alpha & Omega Semiconductor Inc. AOT7S60L	7 A	372 pF	3.9 V	104 W	10 V	MOSFET (Metal Oxide)	600 mOhm	600 V	TO-220	30 V	N-Channel	-55 °C	150 °C	Through Hole	8.2 nC	TO-220-3

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$