SPN04N60S5

Obsolete

Infineon Technologies

MOSFET N-CH 600V 800MA SOT223-4

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Obsolete

Infineon Technologies

MOSFET N-CH 600V 800MA SOT223-4

Technical Specifications

Parameters and characteristics for this part

Specification	SPN04N60S5

Current - Continuous Drain (Id) @ 25°C	800 mA
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	17 nC
Input Capacitance (Ciss) (Max) @ Vds	600 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-261AA, TO-261-4
Power Dissipation (Max)	1.8 W
Rds On (Max) @ Id, Vgs	950 mOhm
Supplier Device Package	PG-SOT223-4
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Supplier Device Package	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Technology	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	FET Type
Infineon Technologies SPN04N60S5	950 mOhm	600 V	PG-SOT223-4	Surface Mount	600 pF	17 nC	-55 °C	150 °C	1.8 W	MOSFET (Metal Oxide)	10 V	TO-261-4 TO-261AA	20 V	800 mA	N-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 600 V 800mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4

Technical documentation and resources