IHW50N65R5XKSA1
ActiveTHE IHW50N65R5 IS A 650 V, 50 A IGBT DISCRETES WITH ANTI-PARALLEL DIODE IN TO-247 PACKAGE
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IHW50N65R5XKSA1
ActiveTHE IHW50N65R5 IS A 650 V, 50 A IGBT DISCRETES WITH ANTI-PARALLEL DIODE IN TO-247 PACKAGE
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Technical Specifications
Parameters and characteristics for this part
| Specification | IHW50N65R5XKSA1 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 80 A |
| Current - Collector Pulsed (Icm) | 150 A |
| Gate Charge | 230 nC |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -40 C |
| Package / Case | TO-247-3 |
| Power - Max [Max] | 282 W |
| Reverse Recovery Time (trr) | 95 ns |
| Supplier Device Package | PG-TO247-3 |
| Switching Energy | 740 µJ, 180 µJ |
| Td (on/off) @ 25°C [custom] | 26 ns |
| Td (on/off) @ 25°C [custom] | 220 ns |
| Test Condition | 8 Ohm, 25 A, 400 V, 15 V |
| Vce(on) (Max) @ Vge, Ic | 1.7 V |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
Pricing
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Description
General part information
IHW50N65 Series
TheReverse Conducting R5 650 V, 50 A RC-H5IGBTswith monolithically integrated reverse conducting diode in a TO247 package has been optimized for the demanding requirements of Induction Cooking applications. With a monolithically integrated diode, the 650 V RC-H5 IGBTs are perfectly suited for soft switching applications such asinduction cookingstoves andinverterized microwaveovens. The RC-H5 IGBT complement the previous generation of reverse conduction IGBTs and extend the performance leadership of the RC-H family, focusing on system efficiency and reliability.
Documents
Technical documentation and resources