IXFX260N17T

Obsolete

IXYS

MOSFET N-CH 170V 260A PLUS247-3

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Obsolete

IXYS

MOSFET N-CH 170V 260A PLUS247-3

Technical Specifications

Parameters and characteristics for this part

Specification	IXFX260N17T

Current - Continuous Drain (Id) @ 25°C	260 A
Drain to Source Voltage (Vdss)	170 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	400 nC
Input Capacitance (Ciss) (Max) @ Vds	24000 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3 Variant
Power Dissipation (Max)	1670 W
Rds On (Max) @ Id, Vgs	6.5 mOhm
Supplier Device Package	PLUS247™-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	5 V

Part	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Technology	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Supplier Device Package	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Mounting Type	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Drain to Source Voltage (Vdss)
IXYS IXFX260N17T	260 A	10 V	MOSFET (Metal Oxide)	-55 °C	175 ░C	N-Channel	24000 pF	20 V	PLUS247™-3	6.5 mOhm	5 V	Through Hole	TO-247-3 Variant	400 nC	1670 W	170 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 170 V 260A (Tc) 1670W (Tc) Through Hole PLUS247™-3

Technical documentation and resources

No documents available