BCX56H6327XTSA1

Infineon Technologies

TRANS NPN 80V 1A SOT89

Search across all available documentation for this part.

Infineon Technologies

TRANS NPN 80V 1A SOT89

Technical Specifications

Parameters and characteristics for this part

Specification	BCX56H6327XTSA1

Current - Collector (Ic) (Max) [Max]	1 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	40
Frequency - Transition	100 MHz
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	TO-243AA
Power - Max [Max]	2 W
Qualification	AEC-Q101
Supplier Device Package	PG-SOT89
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	80 V

Part	Transistor Type	Operating Temperature	Current - Collector (Ic) (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Frequency - Transition	Mounting Type	Supplier Device Package	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max) [Max]	Package / Case	Power - Max [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Grade	Qualification
Infineon Technologies BCX56E6327HTSA1	NPN	150 °C	1 A	80 V	100 MHz	Surface Mount	PG-SOT89	500 mV	100 nA	TO-243AA	2 W	40
Infineon Technologies BCX56H6327XTSA1	NPN	150 °C	1 A	80 V	100 MHz	Surface Mount	PG-SOT89	500 mV	100 nA	TO-243AA	2 W	40	Automotive	AEC-Q101
Infineon Technologies BCX5616E6327HTSA1	NPN	150 °C	1 A	80 V	100 MHz	Surface Mount	PG-SOT89	500 mV	100 nA	TO-243AA	2 W	100
Infineon Technologies BCX5616E6433HTMA1	NPN	150 °C	1 A	80 V	100 MHz	Surface Mount	PG-SOT89	500 mV	100 nA	TO-243AA	2 W	100

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor NPN 80 V 1 A 100MHz 2 W Surface Mount PG-SOT89

Technical documentation and resources