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HERF1007G - TO-220-3FP

HERF1007G

Active
Taiwan Semiconductor Corporation

80NS, 10A, 800V, HIGH EFFICIENT RECOVERY RECTIFIER

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HERF1007G - TO-220-3FP

HERF1007G

Active
Taiwan Semiconductor Corporation

80NS, 10A, 800V, HIGH EFFICIENT RECOVERY RECTIFIER

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationHERF1007G
Current - Average Rectified (Io) (per Diode)10 A
Current - Reverse Leakage @ Vr10 µA
Diode Configuration1 Pair Common Cathode
Mounting TypeThrough Hole
Operating Temperature - Junction [Max]150 °C
Operating Temperature - Junction [Min]-55 °C
Package / CaseTO-220-3 Full Pack, Isolated Tab
Reverse Recovery Time (trr)80 ns
Speed200 mA, 500 ns
Supplier Device PackageITO-220AB
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]800 V
Voltage - Forward (Vf) (Max) @ If1.7 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 0.98
50$ 0.78
100$ 0.62
500$ 0.53
1000$ 0.43
2000$ 0.40
5000$ 0.38
10000$ 0.37

Description

General part information

HERF1007 Series

Diode Array 1 Pair Common Cathode 800 V 10A Through Hole TO-220-3 Full Pack, Isolated Tab