Specification	HAT2173H-EL-E

Current - Continuous Drain (Id) (Ta)	25 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On)	8 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	61 nC
Input Capacitance (Ciss) (Max)	4350 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-669, SC-100
Package Name	LFPAK
Power Dissipation (Max)	30 W
Rds On (Max)	15 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	6 V

HAT2173H Series

Nch Single Power Mosfet 100V 25A 15Mohm Lfpak

Part	Package Name	Current - Continuous Drain (Id) (Ta)	FET Type	Operating Temperature	Drain to Source Voltage (Vdss)	Vgs(th) (Max)	Technology	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Package / Case	Mounting Type	Input Capacitance (Ciss) (Max)	Rds On (Max)	Power Dissipation (Max)	Vgs (Max)	Gate Charge (Max)
Renesas Electronics Corporation HAT2173H-EL-E	LFPAK	25 A	N-Channel	150 °C	100 V	6 V	MOSFET (Metal Oxide)	10 V	8 V	SC-100 SOT-669	Surface Mount	4350 pF	15 mOhm	30 W	20 V	61 nC

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