STW56N60M2-4

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STMicroelectronics

N-CHANNEL 600 V, 45 MOHM TYP., 52 A MDMESH M2 POWER MOSFET IN A TO247-4 PACKAGE

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DocumentsTN1225 AN4406 +26

STW56N60M2-4

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STMicroelectronics

N-CHANNEL 600 V, 45 MOHM TYP., 52 A MDMESH M2 POWER MOSFET IN A TO247-4 PACKAGE

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DocumentsTN1225 AN4406 +26

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Technical Specifications

Parameters and characteristics for this part

Specification	STW56N60M2-4

Current - Continuous Drain (Id) @ 25°C	52 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max] [custom]	91 nC
Input Capacitance (Ciss) (Max) @ Vds	3750 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-247-4
Power Dissipation (Max)	350 W
Rds On (Max) @ Id, Vgs	55 mOhm
Supplier Device Package	TO-247-4
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	4 V

STW56N60M2-4 Series

N-channel 600 V, 0.052 Ohm typ., 50 A MDmesh DM2 Power MOSFET in a TO-247 package

Part	Operating Temperature	Gate Charge (Qg) (Max) @ Vgs [Max] [custom]	Supplier Device Package	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Power Dissipation (Max)	Package / Case	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Rds On (Max) @ Id, Vgs	Technology	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]
STMicroelectronics STW56N60M2-4	150 °C	91 nC	TO-247-4	N-Channel	3750 pF	4 V	10 V	Through Hole	350 W	TO-247-4	52 A	25 V	55 mOhm	MOSFET (Metal Oxide)	600 V
STMicroelectronics STW56N60DM2			TO-247-3	N-Channel		5 V	10 V	Through Hole	360 W	TO-247-3	50 A	25 V	60 mOhm	MOSFET (Metal Oxide)	600 V	-55 °C	150 °C	4100 pF	90 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 9.72
		30	$ 5.09
		120	$ 4.79
		510	$ 4.43
Newark	Each	1	$ 11.93
		10	$ 10.54
		25	$ 9.15
		50	$ 7.75
		100	$ 7.47
		250	$ 7.19

Description

General part information

STW56N60M2-4 Series

This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.

STW56N60M2-4

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STW56N60M2-4

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Technical Specifications

STW56N60M2-4 Series

Pricing

Description

STW56N60M2-4 Series

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Technical Data Sheet EN

Datasheet

STW56N60M2-4 Series