Specification	SQ2351ES-T1_BE3

Current - Continuous Drain (Id) (Tc)	3.2 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On)	2.5 V
Drive Voltage (Min Rds On)	4.5 V
FET Type	P-Channel
Gate Charge (Max)	5.5 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	330 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-236-3, SOT-23-3, SC-59
Package Name	SOT-23-3 (TO-236)
Power Dissipation (Max)	2 W
Qualification	AEC-Q101
Rds On (Max)	115 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max)	1.5 V

SQ2351 Series

Part	Drive Voltage (Max Rds On)	Drive Voltage (Min Rds On)	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Gate Charge (Max)	Vgs(th) (Max)	Grade	Rds On (Max)	Package / Case	Input Capacitance (Ciss) (Max)	Package Name	Qualification	FET Type	Current - Continuous Drain (Id) (Tc)	Operating Temperature (Min)	Operating Temperature (Max)	Technology	Vgs (Max)	Mounting Type
Vishay Dale SQ2351ES-T1_BE3	2.5 V	4.5 V	2 W	20 V	5.5 nC	1.5 V	Automotive	115 mOhm	SC-59 SOT-23-3 TO-236-3	330 pF	SOT-23-3 (TO-236)	AEC-Q101	P-Channel	3.2 A	-55 °C	175 °C	MOSFET (Metal Oxide)	12 V	Surface Mount
Vishay Dale SQ2351ES-T1_GE3	2.5 V	4.5 V	2 W	20 V	5.5 nC	1.5 V	Automotive	115 mOhm	SC-59 SOT-23-3 TO-236-3	330 pF	SOT-23-3 (TO-236)	AEC-Q101	P-Channel	3.2 A	-55 °C	175 °C	MOSFET (Metal Oxide)	12 V	Surface Mount

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