STP45N60DM2AG

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STMicroelectronics

AUTOMOTIVE-GRADE N-CHANNEL 600 V, 0.085 OHM TYP., 34 A MDMESH DM2 POWER MOSFET IN A TO-220 PACKAGE

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STP45N60DM2AG

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STMicroelectronics

AUTOMOTIVE-GRADE N-CHANNEL 600 V, 0.085 OHM TYP., 34 A MDMESH DM2 POWER MOSFET IN A TO-220 PACKAGE

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STP45N60DM2AG

Current - Continuous Drain (Id) @ 25°C	34 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	56 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	2500 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	250 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	93 mOhm
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	5 V

STP45N60DM2AG Series

Automotive-grade N-channel 600 V, 0.085 Ohm typ., 34 A MDmesh DM2 Power MOSFET in a TO-220 package

Part	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Vgs (Max)	Grade	FET Type	Power Dissipation (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds [Max]	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Technology	Qualification	Package / Case
STMicroelectronics STP45N60DM2AG	600 V	93 mOhm	34 A	5 V	25 V	Automotive	N-Channel	250 W	-55 °C	150 °C	10 V	TO-220	2500 pF	Through Hole	56 nC	MOSFET (Metal Oxide)	AEC-Q101	TO-220-3

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 6.67
		50	$ 3.56
		100	$ 3.26
		500	$ 2.73
		1000	$ 2.69

Description

General part information

STP45N60DM2AG Series

This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge and time (Qrr, trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.

Documents

Technical documentation and resources