IXFT74N20

Obsolete

IXYS

MOSFET N-CH 200V 74A TO268

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Obsolete

IXYS

MOSFET N-CH 200V 74A TO268

Technical Specifications

Parameters and characteristics for this part

Specification	IXFT74N20

Current - Continuous Drain (Id) @ 25°C	74 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	280 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	5400 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D3PAK (2 Leads + Tab), TO-268AA, TO-268-3
Power Dissipation (Max)	360 W
Rds On (Max) @ Id, Vgs	30 mOhm
Supplier Device Package	TO-268AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	4 V

Part	Vgs(th) (Max) @ Id [Max]	Mounting Type	Rds On (Max) @ Id, Vgs	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Package / Case	Technology	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type
IXYS IXFT74N20	4 V	Surface Mount	30 mOhm	TO-268AA	10 V	20 V	74 A	D3PAK (2 Leads + Tab) TO-268-3 TO-268AA	MOSFET (Metal Oxide)	200 V	360 W	-55 °C	150 °C	5400 pF	280 nC	N-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 200 V 74A (Tc) 360W (Tc) Surface Mount TO-268AA

Technical documentation and resources

No documents available