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Transistor MOSFET N-CH 600V 72A 3-Pin TO-247 Tube

SCT50N120

Obsolete
STMicroelectronics

SILICON CARBIDE POWER MOSFET 1200 V, 65 A, 59 MOHM (TYP. TJ = 150 C) IN AN HIP247 PACKAGE

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Transistor MOSFET N-CH 600V 72A 3-Pin TO-247 Tube

SCT50N120

Obsolete
STMicroelectronics

SILICON CARBIDE POWER MOSFET 1200 V, 65 A, 59 MOHM (TYP. TJ = 150 C) IN AN HIP247 PACKAGE

Find alt

Description

General part information

SCT50 Series

This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material allows designers to use an industry-standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications.

Technical Specifications

Parameters and characteristics for this part

SpecificationSCT50N120
Current - Continuous Drain (Id) (Tc)65 A
Drain to Source Voltage (Vdss)1200 V
Drive Voltage (Max Rds On, Min Rds On)20 V
FET TypeN-Channel
Gate Charge (Max)122 nC
Input Capacitance (Ciss) (Max)1900 pF
Mounting TypeThrough Hole
Operating Temperature (Max)200 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-247-3
Package NameHiP247™
Power Dissipation (Max)318 W
Rds On (Max)69 mOhm
TechnologySiCFET (Silicon Carbide)
Vgs (Max) Negative-10 V
Vgs (Max) Positive25 V
Vgs(th) (Max)3 V

Pricing

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CAD

3D models and CAD resources for this part