STP75NS04Z

Obsolete

STMicroelectronics

MOSFET N-CH 33V 80A TO220AB

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Obsolete

STMicroelectronics

MOSFET N-CH 33V 80A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	STP75NS04Z

Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	50 nC
Input Capacitance (Ciss) (Max) @ Vds	1860 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	110 W
Rds On (Max) @ Id, Vgs	11 mOhm
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	Clamped
Vgs(th) (Max) @ Id	4 V

Part	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Vgs (Max)	Supplier Device Package	FET Type	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Vgs(th) (Max) @ Id	Package / Case
STMicroelectronics STP75NS04Z	1860 pF	50 nC	11 mOhm	Clamped	TO-220	N-Channel	Through Hole	10 V	110 W	-55 °C	175 ░C	MOSFET (Metal Oxide)	4 V	TO-220-3

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 33 V 80A (Tc) 110W (Tc) Through Hole TO-220

Technical documentation and resources