RN1303(TE85L,F)

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Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 0.1A SC70

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Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 0.1A SC70

Technical Specifications

Parameters and characteristics for this part

Specification	RN1303(TE85L,F)

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	70
Frequency - Transition	250 MHz
Mounting Type	Surface Mount
Package / Case	SC-70, SOT-323
Power - Max [Max]	100 mW
Resistor - Base (R1)	22 kOhms
Resistor - Emitter Base (R2)	22 kOhms
Supplier Device Package	SC-70
Transistor Type	NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Transistor Type	Resistor - Base (R1)	Power - Max [Max]	Vce Saturation (Max) @ Ib, Ic	Resistor - Emitter Base (R2)	Package / Case	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	Mounting Type	Current - Collector Cutoff (Max) [Max]	Frequency - Transition
Toshiba Semiconductor and Storage RN1303,LF	NPN - Pre-Biased	22 kOhms	100 mW	300 mV	22 kOhms	SC-70 SOT-323	70	50 V	100 mA	SC-70	Surface Mount	500 nA	250 MHz
Toshiba Semiconductor and Storage RN1303(TE85L,F)	NPN - Pre-Biased	22 kOhms	100 mW	300 mV	22 kOhms	SC-70 SOT-323	70	50 V	100 mA	SC-70	Surface Mount	500 nA	250 MHz
Toshiba Semiconductor and Storage RN1303,LXHF	NPN - Pre-Biased	22 kOhms	100 mW	300 mV	22 kOhms	SC-70 SOT-323	70	50 V	100 mA	SC-70	Surface Mount	500 nA	250 MHz

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 250 MHz 100 mW Surface Mount SC-70

Technical documentation and resources

No documents available