TK16N60W,S1VF

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Toshiba Semiconductor and Storage

MOSFET N CH 600V 15.8A TO247

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Toshiba Semiconductor and Storage

MOSFET N CH 600V 15.8A TO247

Technical Specifications

Parameters and characteristics for this part

Specification	TK16N60W,S1VF

Current - Continuous Drain (Id) @ 25°C	15.8 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	38 nC
Input Capacitance (Ciss) (Max) @ Vds	1350 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-247-3
Power Dissipation (Max)	130 W
Rds On (Max) @ Id, Vgs	190 mOhm
Supplier Device Package	TO-247
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	3.7 V

Part	Mounting Type	Supplier Device Package	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Operating Temperature	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Technology	Power Dissipation (Max)
Toshiba Semiconductor and Storage TK16N60W,S1VF	Through Hole	TO-247	TO-247-3	38 nC	N-Channel	30 V	15.8 A	190 mOhm	150 °C	600 V	3.7 V	10 V	1350 pF	MOSFET (Metal Oxide)	130 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 600 V 15.8A (Ta) 130W (Tc) Through Hole TO-247

Technical documentation and resources