RGT40NS65DGTL
ActiveRohm Semiconductor
5ΜS SHORT-CIRCUIT TOLERANCE, 650V 20A, FRD BUILT-IN, LPDS, FIELD STOP TRENCH IGBT
RGT40NS65DGTL
ActiveRohm Semiconductor
5ΜS SHORT-CIRCUIT TOLERANCE, 650V 20A, FRD BUILT-IN, LPDS, FIELD STOP TRENCH IGBT
Description
General part information
RGT40NS65D(LPDS) Series
ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.
Technical Specifications
Parameters and characteristics for this part
| Specification | RGT40NS65DGTL |
|---|---|
| Current - Collector (Ic) (Max) | 40 A |
| Current - Collector Pulsed (Icm) | 60 A |
| Gate Charge | 40 nC |
| IGBT Type | Trench Field Stop |
| Input Type | Standard |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -40 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB |
| Package Name | LPDS |
| Power - Max | 161 W |
| Reverse Recovery Time (trr) | 58 ns |
| Td (off) @ 25°C | 75 ns |
| Td (on) @ 25°C | 22 ns |
| Test Condition Current | 20 A |
| Test Condition Resistance | 10 Ohm |
| Test Condition Voltage | 400 V |
| Test Condition Voltage (Secondary) | 15 V |
| Vce(on) (Max) | 2.1 V |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
Pricing
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CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
Datasheet
Package Dimensions
Importance of Probe Calibration When Measuring Power: Deskew
PCB Layout Thermal Design Guide
Judgment Criteria of Thermal Evaluation
How to Create Symbols for PSpice Models
Explanation for Marking
Inner Structure
Compliance of the ELV directive
Method for Calculating Junction Temperature from Transient Thermal Resistance Data
Taping Information
Power Eco Family: Overview of ROHM's Power Semiconductor Lineup
Calculation of Power Dissipation in Switching Circuit
How to Use LTspice® Models
Method for Monitoring Switching Waveform
θ<sub>JA</sub> and Ψ<sub>JT</sub>
Generation Mechanism of Voltage Surge on Commutation Side (Basic)
About Flammability of Materials
Two-Resistor Model for Thermal Simulation
Condition of Soldering
Types and Features of Transistors
4 Steps for Successful Thermal Designing of Power Devices
Semikron Danfoss: Partnering for the Safe Supply of Industrial Power Modules
Notes for Calculating Power Consumption:Static Operation
Condition of Soldering
Inner Structure
Estimation of switching losses in IGBTs operating with resistive load
Part Explanation
What is a Thermal Model? (IGBT)
Basics of Thermal Resistance and Heat Dissipation
How to Use the Thermal Resistance and Thermal Characteristics Parameters
What Is Thermal Design
Notes for Temperature Measurement Using Thermocouples
Notes for Temperature Measurement Using Forward Voltage of PN Junction
Measurement Method and Usage of Thermal Resistance RthJC
How to Use LTspice® Models: Tips for Improving Convergence
Precautions When Measuring the Rear of the Package with a Thermocouple
Anti-Whisker formation
Moisture Sensitivity Level
Impedance Characteristics of Bypass Capacitor
Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)
The Problem with Traditional Vaccine Storage Freezers and How ROHM Cutting-edge Power Solutions Can Take them to the Next Level
θ<sub>JC</sub> and Ψ<sub>JT</sub>
About Export Administration Regulations (EAR)
Precautions for Thermal Resistance of Insulation Sheet
Reliability Test Result