2N6660JTXL02

Obsolete

Vishay General Semiconductor - Diodes Division

MOSFET N-CH 60V 990MA TO205AD

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Obsolete

Vishay General Semiconductor - Diodes Division

MOSFET N-CH 60V 990MA TO205AD

Technical Specifications

Parameters and characteristics for this part

Specification	2N6660JTXL02

Current - Continuous Drain (Id) @ 25°C	990 mA
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	10 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	5 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	50 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-39-3 Metal Can, TO-205AD
Power Dissipation (Max)	6.25 W, 725 mW
Rds On (Max) @ Id, Vgs	3 Ohm
Supplier Device Package	TO-205AD
Supplier Device Package	TO-39
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	FET Type	Mounting Type	Rds On (Max) @ Id, Vgs	Supplier Device Package	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Package / Case	Vgs (Max)
Vishay General Semiconductor - Diodes Division 2N6660JTXL02	-55 °C	150 °C	MOSFET (Metal Oxide)	60 V	6.25 W 725 mW	10 V	5 V	N-Channel	Through Hole	3 Ohm	TO-205AD	TO-39	50 pF	990 mA	2 V	TO-205AD TO-39-3 Metal Can	20 V
Vishay General Semiconductor - Diodes Division 2N6660-2	-55 °C	150 °C	MOSFET (Metal Oxide)	60 V	6.25 W 725 mW	10 V	5 V	N-Channel	Through Hole	3 Ohm	TO-205AD	TO-39	50 pF	990 mA	2 V	TO-205AD TO-39-3 Metal Can	20 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 60 V 990mA (Tc) 725mW (Ta), 6.25W (Tc) Through Hole TO-205AD (TO-39)

Technical documentation and resources