IPB80R290C3AATMA1

Obsolete

Infineon Technologies

MOSFET P-CH TO263-3

Search across all available documentation for this part.

Obsolete

Infineon Technologies

MOSFET P-CH TO263-3

Technical Specifications

Parameters and characteristics for this part

Specification	IPB80R290C3AATMA1

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Part	Supplier Device Package	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs(th) (Max) @ Id	Grade	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Package / Case	FET Type	Power Dissipation (Max) [Max]	Mounting Type	Qualification	Operating Temperature [Max]	Operating Temperature [Min]
Infineon Technologies IPB80R290C3AATMA1
Infineon Technologies IPB80R290C3AATMA2	PG-TO263-3-2	20 V	2300 pF	3.9 V	Automotive	17 A	117 nC	MOSFET (Metal Oxide)	290 mOhm	10 V	800 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	N-Channel	227 W	Surface Mount	AEC-Q101	150 °C	-40 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

MOSFET P-CH TO263-3

Technical documentation and resources

No documents available