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IXTH102N15T

IXTH102N15T

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LITTELFUSE

DISCMSFT NCHTRENCHGATE-GEN1 TO-247AD/ TUBE

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IXTH102N15T

IXTH102N15T

Active
LITTELFUSE

DISCMSFT NCHTRENCHGATE-GEN1 TO-247AD/ TUBE

Find alt

Description

General part information

IXTH102 Series

Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(on), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating junction temperature from -40 °C to 175 °C make them suitable candidates for automobile applications and other similar demanding applications in harsh environments. Advantages: Easy to Mount Space Savings High power density

Technical Specifications

Parameters and characteristics for this part

SpecificationIXTH102N15T
Current - Continuous Drain (Id) (Tc)102 A
Drain to Source Voltage (Vdss)150 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)87 nC
Input Capacitance (Ciss) (Max)5220 pF
Mounting TypeThrough Hole
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-247-3
Package NameTO-247 (IXTH)
Power Dissipation (Max)455 W
Rds On (Max)18 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)5 V

Pricing

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CAD

3D models and CAD resources for this part